主な研究論文

メディア通信工学科・機能性材料研究室

村野井徹夫

磁性薄膜(1998+)

1. 杉田龍二，斉藤　修，木下孝広，村野井徹夫，“パターニングされたマスター媒体を用いた磁気転写”　信学技報　MR2000-07 pp.37-41 (2000).

2. R. Sugita, T. Kinoshita, O. Saito, T. Muranoi, M. Nishikawa and M. Nagao, "A Novel Magnetic Contact Duplication Technique for Servo-Writing on Magnetic Disks," to be appeared in IEEE Trans. on Magnetics Vol.36, No.9, (2000).

3. R. Sugita, T. Watahiki, T. Muranoi and T. Ishida, "Magnetization Reversal Mechanism of Co-O Films with Oblique Anisotropy," Annual Conference on Magnetism and Magnetic Materials, held at Miami, Florida, U.S.A. (Nov. 9-12, 1998), J. Appl.Phys., 85(8)(15 April) (1999) pp.4714-4716.

ULSIの静電破壊(1997-1998+)

1. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "The use of the coulomb meter to measure the excess mobile charge and capacitance of the LSI circuits in the charged device model," Semicond. Sci. Technol. 13 (12) (1998) pp.1368-1373.

2. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "A new CDM test method and protective circuits against the Excessive mobile charge," Semicond. Sci. Technol. 13(10) (1998) pp.1065-1070.

3. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "Problems of the human body model and electrostatic discharge part 2: HBM test for non-wired pins of LSIs," Semicond. Sci. Technol. 13(9) (1998) pp.972-975.

4. K. Suzuki, T. Muranoi R. Sugita, M. Takeuchi and T. Hariu, "Problems of the human body model and electrostatic discharge part 1: discharge from LSIs held by a charged person," Semicond. Sci. Technol. 13(9) (1998) pp.967-971.

5. 鈴木功一，村野井徹夫，竹内　學，“LSIの静電破壊因子とその計測方法” 電子情報通信学会誌　J80-C-Ⅱ (1997) pp.335-344. ["Electrostatic Discharge Failure Factor of LSIs and a New Method for Measuring It," Electronics and Communications in Japan, Part 2, 81(4) (1988) pp.38-49.]

Ⅱ-Ⅵ族化合物半導体(1980-1998+)

1. 村野井徹夫 “セレン化亜鉛青色発光ダイオード及び青色レーザーダイオードに関する研究 ANNUAL REPORT OF THE MURATA SCIENCE FOUNDATION, No.12 (1998) pp.60-63.

2. Tetsuo Muranoi and Masami Sekine, "Vapor Phase Epitaxial Growth of ZnTe Films Using Metallic Sources," Jpn. J. Appl. Phys., 35 (1996) pp.L374-L376.

3. T. Muranoi, T. Shiohara, A. Sotokawa, H. Yoshida, S. Isobe, and N. Kanbe, "Gas Effect on Transport Rates of ZnSe in Closed Ampoules," J. Crystal Growth 146 (1995) pp.49-52.

4. T. Muranoi, S. Onizawa and M. Sasaki, "Iodine Doping in ZnSe Films grown by Vapor Phase Epitaxy," J. Crystal Growth 138 (1994) pp.255-259.

5. T. Muranoi, M. Hirose, Mohamad Razip, T. Akasaka and K. Ohno, "Characterization of Vapor Phase Epitaxial ZnSe Films," J. Electron. Mat., 22 (1993) pp.505-507.

6. Tetsuo Muranoi, "p-n Junction Diodes prepared in Vapor Phase Epitaxial ZnSe Films," J. Crystal Growth 117 (1992) pp.1059-1061.

7. Tetsuo Muranoi, "PL and SIMS of Vapor Phase Epitaxial ZnSe Films," J. Crystal Growth 115 (1991) pp.679-682.

8. Tetsuo Muranoi, "Vapor Phase Homo- and Heteroepitaxies of ZnSe," Jpn. J. Appl. Phys., 30 (1991) pp.L2009-L2011.

9. Tetsuo Muranoi, "Variable Diffusion Coefficeint in ZnSe Films on GaAs," Thin Solid Films 197 (1991) pp.393-396.

10. T. Muranoi, K. Kurosawa, K. Yamamoto, T. Miyokawa, M. Shimizu and M. Furukoshi, "Low Temperature Vapor Phase Epitaxy of Undoped ZnSe Films on (100)GaAs Using Metallic Zn and Se," Jpn. J. Appl. Phys., 29 (1990) 2820-2821.

11. T. Muranoi, Y. Fujita, T. Watanabe, N. Ishii, Y. Moto and M. Furukoshi, "Vapor Phase Eitaxial Growth of Highly Conductive P-Type ZnSe Films with Codoping of P and Li," Jpn. J. appl. Phys., 29 (1990) L1959-L1962.

12. T. Muranoi and M. Furukoshi, "Vapor and Solid Phase Epitaxies of ZnSe Films on GaAs Using Metallic Zn and Se," Jpn. J. Appl. Phys., 22 (1983) pp.307-315.

13. T. Muranoi and M. Furukoshi, "The Electrical Properties and Impurity Profiles of ZnSe Films on GaAs and Gallium Diffused ZnSe Single Crystals," Thin Solid Films 86 (1981) 307-315.

14. T. Muranoi and M. Furukoshi, "Vapor Phase Epitaxial Growth of ZnSe Films Using Metallic Zn and Metallic Se," J. Electrochem. Soc., 127 (1980) pp.2295-2298.

15. T. Muranoi "p-n Junction and blue LEDs with vapor phase epitaxial ZnSe: in New Functionality Materials Vol.A: Optical and Quantum Structural Properties of Semiconductors, edited by T. Tsuruta, M. Doyama, M. Seno and S. Fujita (Elsevier Science Publishers(B.V.) 1993) pp.287-292.

16. 村野井，古越　“ZnSe薄膜の気相成長”茨城大学工学部・研究集報　30 (1982) pp.69-76.

酸化物半導体(1975-1978)

1. T. Muranoi and M. Furukoshi, "Properties of Stannic Oxide Thin Films produced from the SnCl4-H2O and SnCl4-H2O2 Reaction Systems," Thin Solid Films 48 (1978) pp.309-318.

2. 村野井，古越　“(CH3)2SnCl4およびSnCl4による透明導電性SnO2薄膜”茨城大学工学部・研究集報 23 (1975) pp.133-139.

MOS技術（酸化膜・窒化膜・不純物拡散）(1967-1969)

1. 菊間，古越，村野井 “シリコン酸化膜のフォトエッチング”茨城大学工学部・研究集報 17 (1969) pp.157-163.

2. 古越，村野井，菊間 “リンおよびホウ素のシリコンへの拡散における酸素の効果”茨城大学工学部・研究集報 17 (1969) pp.147-155.

3. 古越，菊間，村野井 “熱分解シリコン窒化膜の製法と特性”茨城大学工学部・研究集報 16 (1968) pp.116-131.

4. 前田，村野井 “シリコンMOSダイオードの雑音とその原因に関する研究”北海道大学工学部研究報告 44 (1967) pp.113-131.

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