Main publications

Functionality Materials Lab.

Department of Media and Telecommunications Engineering

Ibaraki University

Prof. Tetsuo Muranoi

Back Japanese Homepage of DMT

Visitors count since Oct. 20, 1999.

Magnetic Films (1998+)

1. R. Sugita, O. Saito, T. Kinoshita, and T. Muranoi, "Magnetic Contact Duplication Using Lithographically Patterned Master Media," Technical Report of IEICE, MR2000-07, pp.37-41 (2000)

2. R. Sugita, T. Kinoshita, O. Saito, T. Muranoi, M. Nishikawa and M. Nagao, "A Novel Magnetic Contact Duplication Technique for Servo-Writing on Magnetic Disks," to be appeared in IEEE Trans. on Magnetics Vol.36, No.9, (2000).

3. R. Sugita, T. Watahiki, T. Muranoi and T. Ishida, "Magnetization Reversal Mechanism of Co-O Films with Oblique Anisotropy," Annual Conference on Magnetism and Magnetic Materials, held at Miami, Florida, U.S.A. (Nov. 9-12, 1998), J. Appl. Phys. 85(8)(15 April) (1999) pp.4714-4716.

Electrostatic Destruction of ULSI (1997-1998+)

1. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "The use of the coulomb meter to measure the excess mobile charge and capacitance of LSI circuits in the charged device model," Semicond. Sci. Technol. 13(12) (1998) pp.1368-1378.

2. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "A new CDM test method and protective circuits against the Excessive mobile charge," Semicond. Sci. Technol. 13(10) (1998) pp.1065-1070.

3. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "Problems of the human body model and electrostatic discharge part 2: HBM test for non-wired pins of LSIs," Semicond. Sci. Technol. 13(9) (1998) pp.972-975.

4. K. Suzuki, T. Muranoi, R. Sugita, M. Takeuchi and T. Hariu, "Problems of the human body model and electrostatic discharge part 1: discharge from LSIs held by a charged person," Semicond. Sci. Technol. 13(9) (1998) pp.967-971.

5. K. Suzuki, T. Muranoi and M. Takeuchi, "Destruction Factor of LSI in Electrostatic Discharge and Its New Measurement Apparatus," Trans. IEICE@J80-C-‡U (1997) pp.335-344 (in Japanese). [English translation, "Electrostatic Discharge Factor of LSIs and a New Method for Measuring It," Electronics and Communications in Japan, Part 2, 81(4) (1998) pp.38-49.]

II-VI Compound Semiconductors (1980-1998+)

1. Tetsuo Muranoi, "Fundamental Studies on Blue Light Emitting Diodes and Blue Laser Diodes with Zinc Selenide," ANNUAL REPORT OF THE MURATA SCEINCE FOUNDATION, Vol.12, (1998) pp.60-63 (in Japanese).

2. Tetsuo Muranoi and Masami Sekine, "Vapor Phase Epitaxial Growth of ZnTe Films Using Metallic Sources," Jpn. J. Appl. Phys., 35 (1996) pp.L374-L376.

3. T. Muranoi, T. Shiohara, A. Sotokawa, H. Yoshida, S. Isobe, and N. Kanbe, "Gas Effect on Transport Rates of ZnSe in Closed Ampoules," J. Crystal Growth 146 (1995) pp.49-52.

4. T. Muranoi, S. Onizawa and M. Sasaki, "Iodine Doping in ZnSe Films grown by Vapor Phase Epitaxy," J. Crystal Growth 138 (1994) pp.255-259.

5. T. Muranoi, M. Hirose, Mohamad Razip, T. Akasaka and K. Ohno, "Characterization of Vapor Phase Epitaxial ZnSe Films," J. Electron. Mat., 22 (1993) pp.505-507.

6. Tetsuo Muranoi, "p-n Junction Diodes prepared in Vapor Phase Epitaxial ZnSe Films," J. Crystal Growth 117 (1992) pp.1059-1061.

7. Tetsuo Muranoi, "PL and SIMS of Vapor Phase Epitaxial ZnSe Films," J. Crystal Growth 115 (1991) pp.679-682.

8. Tetsuo Muranoi, "Vapor Phase Homo- and Heteroepitaxies of ZnSe," Jpn. J. Appl. Phys., 30 (1991) pp.L2009-L2011.

9. Tetsuo Muranoi, "Variable Diffusion Coefficeint in ZnSe Films on GaAs," Thin Solid Films 197 (1991) pp.393-396.

10. T. Muranoi, K. Kurosawa, K. Yamamoto, T. Miyokawa, M. Shimizu and M. Furukoshi, "Low Temperature Vapor Phase Epitaxy of Undoped ZnSe Films on (100)GaAs Using Metallic Zn and Se," Jpn. J. Appl. Phys., 29 (1990) 2820-2821.

11. T. Muranoi, Y. Fujita, T. Watanabe, N. Ishii, Y. Moto and M. Furukoshi, "Vapor Phase Eitaxial Growth of Highly Conductive P-Type ZnSe Films with Codoping of P and Li," Jpn. J. appl. Phys., 29 (1990) L1959-L1962.

12. T. Muranoi and M. Furukoshi, "Vapor and Solid Phase Epitaxies of ZnSe Films on GaAs Using Metallic Zn and Se," Jpn. J. Appl. Phys., 22 (1983) pp.307-315.

13. T. Muranoi and M. Furukoshi, "The Electrical Properties and Impurity Profiles of ZnSe Films on GaAs and Gallium Diffused ZnSe Single Crystals," Thin Solid Films 86 (1981) 307-315.

14. T. Muranoi and M. Furukoshi, "Vapor Phase Epitaxial Growth of ZnSe Films Using Metallic Zn and Metallic Se," J. Electrochem. Soc., 127 (1980) pp.2295-2298.

15. T. Muranoi "p-n Junction and blue LEDs with vapor phase epitaxial ZnSe: in New Functionality Materials Vol.A: Optical and Quantum Structural Properties of Semiconductors, edited by T. Tsuruta, M. Doyama, M. Seno and S. Fujita (Elsevier Science Publishers(B.V.) 1993) pp.287-292.

16. T. Muranoi and M. Furukoshi "Vapor Phase Epitaxy of ZnSe Films,” J. Fac. Eng. Ibaraki Univ. 30 (1982) pp.69-76 (in Japanese).

Oxide Semiconductors (1975-1978)

1. T. Muranoi and M. Furukoshi, "Properties of Stannic Oxide Thin Films produced from the SnCl4-H2O and SnCl4-H2O2 Reaction Systems," Thin Solid Films 48 (1978) pp.309-318.

2. T. Muranoi and M. Furukoshi, "Tranparent Conducting Stannic Oxide Thin Films Produced from (CH3)2SnCl4 and SnCl4," J. Fac. Eng. Ibaraki Univ. 23 (1975) pp.133-139 (in Japanese).

MOS Technology (Silicon oxide and nitride films, and impurity diffusion)(1967-1969)

1. I. Kikuma, M. Furukoshi and T. Muranoi,"Photo Etching of Silicon Dioxide," J. Fac. Eng. Ibaraki Univ. 17 (1969) pp.157-163 (in Japanese).

2. M. Furukoshi, T. Muranoi and I. Kikuma "Oxygen Effects of Phosphorus and Boron Diffusion in Silicon," J. Fac. Eng. Ibaraki Univ. 17 (1969) pp.147-155 (in Japanese).

3. M. Furukoshi, I. Kikuma and T. Muranoi "Preparation and Proerties of Pyrolytic Silicon Nitride Films," J. Fac. Eng. Ibaraki Univ. 16 (1968) pp.116-131 (in Japanese).

4. M. Maeda and T. Muranoi "A Study on Noize and Its Origin of silicon MOS Diodes," J. Fac. Eng. Hokkaido Univ. 44 (1967) pp.113-131 (in Japanese).